dmc3036lsd document number: ds31311 rev. 4 - 2 1 of 7 www.diodes.com october 2008 ? diodes incorporated dmc3036lsd ne w prod uc t complementary pair enh ancement mode mosfet features ? complementary pair mosfets ? low on-resistance ? n-channel: 36m ? @ 10v 61m ? @ 4.5v ? p-channel: 36m ? @ -10v ? 64m ? @ -4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sop-8l ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? marking information: see page 6 ? ordering information: see page 6 ? weight: 0.072g (approximate) sop-8l d 1 s 1 g 1 d 2 s 2 g 2 n-channel mosfet p-channel mosfet s2 d1 s1 d2 g1 g2 d2 d1 internal schematic top view top view maximum ratings n-channel @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 20 v drain current (note 1) t a = 25c t a = 70c i d 6.9 5.8 a pulsed drain current (note 4) i dm 24 a maximum ratings p-channel @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss -30 v gate-source voltage v gss 20 v drain current (note 1) t a = 25c t a = 70c i d -6 -5 a pulsed drain current (note 4) i dm -21 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 1) p d 2.5 w thermal resistance, junction to ambient r ja 50 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, on 2oz. copper pads with r ja = 50 c/w. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy can be found on ou r website at http://www.diodes .com/products/lead_free/index.php. 4. repetitive rating, pulse width limited by junction temperature.
dmc3036lsd document number: ds31311 rev. 4 - 2 2 of 7 www.diodes.com october 2008 ? diodes incorporated dmc3036lsd new product electrical charact eristics n-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 24v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 1 ? 2.1 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 28 51 36 61 m v gs = 10v, i d = 6.9a v gs = 4.5v, i d = 5.0a forward transfer admittance |y fs | ? 7.7 ? s v ds = 5v, i d = 6.9a diode forward voltage (note 5) v sd 0.5 ? 1.2 v v gs = 0v, i s = 1a dynamic characteristics input capacitance c iss ? 384 ? pf output capacitance c oss ? 67 ? pf reverse transfer capacitance c rss ? 48 ? pf v ds = 15v, v gs = 0v, f = 1.0mhz gate resistance r g ? 1.3 ? v gs = 0v v ds = 0v, f = 1mhz switching characteristics total gate charge q g ? 4.3 8.6 ? v ds = 10v, v gs = 4.5v, i d = 10a v ds = 10v, v gs = 10v, i d = 10a gate-source charge q gs ? 1.2 ? v ds = 10v, v gs = 10v, i d = 10a gate-drain charge q gd ? 2.5 ? nc v ds = 10v, v gs = 10v, i d = 10a electrical charact eristics p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1.0 a v ds = -24v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) -1 ? -2.2 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? 30 53 36 64 m v gs = -10v, i d = -6a v gs = -4.5v, i d = -5a forward transfer admittance |y fs | ? 8.8 ? s v ds =-5v, i d = -6a diode forward voltage (note 5) v sd -0.5 ? -1.2 v v gs = 0v, i s = -1a dynamic characteristics input capacitance c iss ? 637 ? pf output capacitance c oss ? 147 ? pf reverse transfer capacitance c rss ? 105 ? pf v ds = -15v, v gs = 0v, f = 1.0mhz gate resistance r g ? 3.3 ? v gs = 0v, v ds = 0v, f = 1mhz switching characteristics total gate charge q g ? 6.8 13.7 ? v ds = 15v, v gs = -4.5v, i d = 6a v ds = 15v, v gs = -10v, i d = 6a gate-source charge q gs ? 1.6 ? v ds = 15v, v gs = -10v, i d = 6a gate-drain charge q gd ? 4.2 ? nc v ds = 15v, v gs = -10v, i d = 6a notes: 5. short duration pulse test used to minimize self-heating effect.
dmc3036lsd n-channel 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 012 34 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d 5 r ai n c u r r e n t (a) d v = 10v gs v = 4.5v gs v = 3.5v gs v = 3.0v gs v = 2.5v gs 0 6 12 18 24 30 12345 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d 6 r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v pulsed ds 0.01 0.1 1 0 5 10 15 20 25 30 i , drain-source current (a) d fig 3 on-resistance vs. drain current & gate voltage r , stati c d r ain-s o u r c e on-resistance ( ) ds(on) v = 10v gs v = 4.5v gs 0 0.02 0.04 0.06 0.08 0.1 02 4 6 8 i , drain-source current (a) d fig. 4 on-resistance vs. drain current & temperature new product 10 r , s t a t i c d r ain-s o u r c e on-resistance ( ) ds(on) v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 5 static drain-source on-resistance vs. ambient temperature r , s t a t i c d r ai n -s o u r c e on-resistance ( ) ds(on) v = 10v i = 10a gs d v = 4.5v i = 5a gs d 0 0.5 1.0 1.5 2.0 2.5 -50-25 0 25 50 75100125150 t , ambient temperature (c) a fig. 6 gate threshold variation vs. ambient temperature v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 250a d i = 1ma d dmc3036lsd document number: ds31311 rev. 4 - 2 3 of 7 www.diodes.com october 2008 ? diodes incorporated
dmc3036lsd n-channel (continued) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd fig. 7 reverse drain current vs. source-drain voltage i, s o u r c e c u r r e n t (a) s t = 25c a fig. 8 typical total capacitance 0 5 10 15 20 25 30 v , drain-source voltage (v) ds 10 100 1,000 c , c a p a c i t an c e (pf) c iss c rss f = 1mhz c oss 0.001 0.01 0.1 1 0.00001 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 113c/w ? ja ja ja p(pk) t 1 t 2 d = single pulse d = 0.005 d = 0.02 d = 0.01 d = 0.05 d = 0.1 d = 0.5 d = 0.3 d = 0.9 d = 0.7 new product dmc3036lsd document number: ds31311 rev. 4 - 2 4 of 7 www.diodes.com october 2008 ? diodes incorporated
dmc3036lsd p-channel 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 012 34 fig. 10 typical output characteristics -v , drain-source voltage (v) ds -i , d 5 r ai n c u r r e n t (a) d v = -10v gs v = -4.5v gs v = -3.0v gs v = -3.5v gs v = -2.5v v = -2.0v gs gs 0 6 12 18 24 30 123 45 fig. 11 typical transfer characteristics -v , gate source voltage (v) gs -i , d 6 r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v pulsed ds 0.01 0.1 1 0 5 10 15 20 25 30 -i , drain-source current (a) d fig 12 on-resistance vs. drain current & gate voltage r , stati c d r ain-s o u r c e on-resistance ( ) ds(on) v = -10v gs v = -4.5v gs 0 0.02 0.04 0.06 0.08 0.1 024 68 -i , drain-source current (a) d fig 13 on-resistance vs. drain current & temperature new product 10 r , s t a t i c d r ai n -s o u r c e on-resistance ( ) ds(on) v = -4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 14 static drain-source on-resistance vs. ambient temperature r , s t a t i c d r ai n -s o u r c e on-resistance ( ) ds(on) v = -10v i = -10a gs d v = -4.5v i = -5a gs d 0 0.5 1.0 1.5 2.0 2.5 -50-25 0 255075100125150 t , ambient temperature (c) a fig. 15 gate threshold variation vs. ambient temperature -v , g ate t h r es h o ld v o lta g e (v) gs(th) i = -250a d i = 1ma d dmc3036lsd document number: ds31311 rev. 4 - 2 5 of 7 www.diodes.com october 2008 ? diodes incorporated
dmc3036lsd p-channel (continued) 0 4 8 12 16 20 -v , source-drain voltage (v) sd fig. 16 reverse drain current vs. source-drain voltage 0 0.2 0.4 0.6 0.8 1 1.2 -i , s o u r c e c u r r en t (a) s t = 25c a 10 100 1,000 fig. 17 typical total capacitance 0 5 10 15 20 25 30 -v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) c iss c oss c rss f = 1mhz 0.00001 0.001 0.01 0.1 1 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 113c/w ? ja ja ja p(pk) t 1 t 2 d = single pulse d = 0.005 d = 0.02 d = 0.01 d = 0.05 d = 0.1 d = 0.5 d = 0.3 d = 0.9 d = 0.7 new product ordering information (note 6) part number case packaging DMC3036LSD-13 sop-8l 2500/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information ( top view ) logo part no. year : "07" =2007 "08" =2008 xth week: 01~52 1 4 8 5 c3036ld yy ww dmc3036lsd document number: ds31311 rev. 4 - 2 6 of 7 www.diodes.com october 2008 ? diodes incorporated
dmc3036lsd package outline dimensions dmc3036lsd document number: ds31311 rev. 4 - 2 7 of 7 www.diodes.com october 2008 ? diodes incorporated new product suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 sop-8l dim min max a - 1.75 a1 0.08 0.25 a2 1.30 1.50 a3 0.20 typ. b 0.3 0.5 d 4.80 5.30 e 5.79 6.20 e1 3.70 4.10 e 1.27 typ. h - 0.35 l 0.38 1.27 0 8 all dimensions in mm x c1 c2 y dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27
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